Influence of random telegraph noise on quantum bit gate operation

نویسندگان

چکیده

We consider the problem of analyzing spin-flip qubit gate operation in presence Random Telegraph Noise (RTN). Our compressive approach is following. By using Feynman disentangling operators method, we calculate probability driven by different kinds composite pulses, e.g., Constant pulse (C-pulse), Quantum Well (QW-pulse), and Barrier Potential (BP-pulse) RTN. When pulses RTN act x-direction z-direction respectively, optimal time to achieve perfect qubit. report that highest fidelity can be achieved C-pulse, followed BP-pulse QW-pulse. For a more general case, have tested several sequences for achieving high quantum gates, where use acting directions. From calculations, find when QW-pulse, BP-pulse, C-pulse x-direction, y-direction, z-direction, respectively. extend our investigations multiple QW BP while choosing amplitude constant The results calculation show 98.5% throughout course may beneficial error correction.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of random telegraph noise on entanglement and nonlocality of a qubit-qutrit system

We study the evolution of entanglement and nonlocality of a non-interacting qubit-qutrit system under the effect of random telegraph noise (RTN) in independent and common environments in Markovian and non-Markovian regimes. We investigate the dynamics of qubit-qutrit system for different initial states. These systems could be existed in far astronomical objects. A monotone decay of the nonlocalit...

متن کامل

Impact of Random Telegraph Noise on CMOS Logic Delay Uncertainty

Logic Delay Uncertainty Takashi Matsumoto Department of Communications and Computer Engineering Kyoto University, Kyoto, Japan Email: [email protected] Kazutoshi Kobayashi Department of Electronics Kyoto Institute of Technology, Kyoto, Japan Hidetoshi Onodera Department of Communications and Computer Engineering Kyoto University, Kyoto, Japan Abstract—Statistical nature of RTN-...

متن کامل

Characterization of Random Telegraph Noise in Scaled High-κ/Metal-gate MOSFETs with SiO2/HfO2 Gate Dielectrics

In the paper, random telegraph noise (RTN) in high-κ/metal-gate MOSFETs is investigated. The RTN in high-κ MOSFETs is found different compared to that in SiON MOSFETs, and faces challenges in characterization. Therefore, the characterization method is improved based on clustering and Hidden Markov Model, which greatly enhances the ability to extract RTN with non-negligible “ghost noise” in high...

متن کامل

Shot-noise-induced random telegraph noise in shuttle current.

Random telegraph noise in the electric current produced by shot noise is predicted for an array of movable colloid particles by Monte Carlo and molecular dynamics calculations. The electron transport is attributed to the shuttle mechanism where moving colloid particles carry charges. The colloid-particle motion induced by the source-drain voltage shows periodic and/or quasiperiodic vibrations, ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2023

ISSN: ['1089-7550', '0021-8979', '1520-8850']

DOI: https://doi.org/10.1063/5.0147810